features ?e high voltage operation : vds=28v ?e high gain: 15.0db(typ.) at pout=46dbm( avg .) ?e broad frequency range : 2100 to 2200mhz ?e proven reliability description the FLL21E180IU is a high power gaas fet that offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power l-band amplifiers. this device is target for high voltage, low current operation in digitally modulated base station. this product is ideally suited for w-cdma base station amplifiers while offering high gain long term reliability and ease for use. absolute maximum ratings item symbol condition rating unit drain-source voltage v ds 32 v gate-source voltage v gs tc =25 o c -3 v total power dissipation p t 230 w storage temperature t stg -65 to +175 o c channel temperature t ch 200 o c electrical characteristics (case temperature tc =25 o c ) item symbol condition limit unit min. typ . max. pinch-off voltage v p v ds =5v i ds =150ma -0.1 -0.2 -0.5 v gate-source breakdown voltage v gso i gs =-1.5ma -5 v 3rd order inter modulation distortion im 3 v ds =28v - -34 -30 dbc power gain gp i ds(dc) =1.7a 14.0 15.0 - db drain efficiency h d pout=46dbm( avg .) - 26.0 - % adjacent channel leakage power ratio aclr note - -35 - dbc thermal resistance r th channel to case - 0.55 0.65 o c /w note 1 : im3 aclr and gain test condition as follows: im3 & gain : fo =2.1325ghz, f1=2.1475ghz w-cdma(3gpp3.4 12-00) bs-164ch non clipping modulation measured over 3.84mhz at fo-15mhz and fi +15mhz. aclr : fo =2.1325ghz w-cdma(3gpp3.4 12-00) bs-1 64ch non clipping modulation, measured over 3.84mhz at fo +/-5mhz. edition 1.2 mar 2004 1 recommended operating condition(case temperature tc =25 o c ) item symbol condition limit unit dc input voltage v ds <28 v forward gate current i gf r g =1 w <705 ma reverse gate current i gr r g =1 w >-64 ma channel temperature t ch 155 o c FLL21E180IU high voltage - high power gaas fet
FLL21E180IU high voltage - high power gaas fet 2 output power vs . input power @v ds =28v i ds =2a f=2.14ghz pulse rf test : p.w. 1msec ,duty=10% output power vs . frequency @v ds =28v i ds =1.7a pulse rf test : p.w. 1msec ,duty=10% two-carrier imd(aclr), drain efficiency vs . output power @v ds =28v i ds =1.7a fo =2.1325, f1=2.1475ghz w-cdma 3-gpp bs-1 64ch modulation single-carrier aclr , drain efficiency vs . output power @v ds =28v i ds =1.7a fo =2.1325ghz w-cdma 3gpp bs-1 64ch modulation 32 34 36 38 40 42 44 46 48 50 52 54 2 2.05 2.1 2.15 2.2 2.25 2.3 frequency [ghz] output power [dbm] pin=20dbm pin=25dbm pin=30dbm pin=36dbm pin=39.5dbm p1db 34 36 38 40 42 44 46 48 50 52 54 18 20 22 24 26 28 30 32 34 36 38 40 42 input power [dbm] output power [dbm] -60 -55 -50 -45 -40 -35 -30 -25 28 30 32 34 36 38 40 42 44 46 48 output power [dbm] imd [dbc] 0 5 10 15 20 25 30 35 drain efficiency [%] im3 im5 drain efficiency -60 -55 -50 -45 -40 -35 -30 -25 28 30 32 34 36 38 40 42 44 46 48 output power [dbm] aclr [dbc] 0 5 10 15 20 25 30 35 drain efficiency [%] +/-5mhz +/-10mhz drain efficiency
3 high voltage - high power gaas fet FLL21E180IU s-parameters @v ds =28v i ds =850ma f=1.7 to 3 ghz 1port parameters s11 s22 2.0ghz 25 ?? 50 ?? 2.2 2.1 2.2 2.1 2.0ghz 0 ?? +10j +25j +50j +100j +250j -10j -25j -50j -100j -250j 100 ?? 10 ?? s12 s21 0.4 0.3 8 180 0 -90 +90 scale for |s 21 | scale for | s 12 | 2.0ghz 6 2.1 2.2 !freq(ghz) s11(mag) s11(ang) s21(mag) s21(ang) s12(mag) s12(ang) s22(mag) s22(ang) 0.1 0.967 177.2 1.369 157.7 0.001 51.2 0.774 -165.8 0.2 0.941 175.5 1.739 115.0 0.002 32.4 0.912 -173.7 0.3 0.942 175.3 1.321 68.1 0.003 10.1 0.907 -178.7 0.4 0.949 173.9 0.882 40.6 0.002 19.4 0.913 179.1 0.5 0.952 171.9 0.611 21.9 0.001 -28.8 0.921 177.3 1 0.945 161.9 0.314 -21.0 0.002 35.5 0.934 167.6 1.1 0.946 158.7 0.325 -28.5 0.002 45.3 0.929 165.1 1.2 0.945 155.4 0.359 -35.4 0.004 26.5 0.930 162.7 1.3 0.937 151.4 0.413 -43.8 0.005 40.8 0.931 160.1 1.4 0.927 146.0 0.511 -53.2 0.005 37.8 0.926 157.0 1.5 0.911 139.6 0.670 -64.5 0.007 20.0 0.911 152.9 1.6 0.879 130.2 0.931 -79.0 0.009 1.8 0.886 147.9 1.7 0.823 116.8 1.409 -97.0 0.012 -9.9 0.858 142.1 1.8 0.709 95.2 2.294 -122.0 0.017 -34.6 0.821 133.6 1.9 0.528 55.1 3.916 -158.4 0.023 -71.4 0.755 119.0 1.95 0.430 18.6 5.021 177.5 0.024 -102.7 0.672 106.4 2 0.411 -33.4 6.086 148.8 0.025 -136.5 0.520 88.9 2.05 0.493 -82.7 6.662 116.6 0.023 -175.4 0.273 65.9 2.1 0.584 -117.8 6.406 85.6 0.017 142.4 0.030 -60.7 2.11 0.596 -122.9 6.314 79.7 0.016 126.0 0.071 -108.9 2.12 0.608 -128.2 6.184 74.2 0.015 120.0 0.119 -122.9 2.13 0.615 -132.7 6.062 68.9 0.014 110.5 0.166 -129.9 2.14 0.624 -136.9 5.921 63.5 0.012 101.8 0.212 -135.5 2.15 0.627 -140.7 5.726 58.8 0.013 93.5 0.254 -139.5 2.16 0.632 -144.4 5.583 53.8 0.012 80.1 0.294 -143.5 2.17 0.636 -147.8 5.431 49.2 0.012 71.6 0.332 -147.1 2.18 0.634 -150.7 5.226 45.0 0.012 56.2 0.366 -150.2 2.19 0.640 -153.5 5.122 40.7 0.011 57.9 0.397 -152.7 2.2 0.638 -156.1 4.975 36.8 0.012 39.2 0.428 -155.8 2.25 0.632 -167.2 4.354 18.1 0.011 3.8 0.545 -167.2 2.3 0.618 -175.7 3.859 1.9 0.014 -21.7 0.626 -176.1 2.35 0.594 177.2 3.517 -12.8 0.015 -37.4 0.687 175.7 2.4 0.560 170.7 3.317 -26.9 0.017 -58.6 0.725 168.6 2.5 0.442 159.1 3.140 -54.8 0.021 -90.4 0.771 154.2 2.6 0.238 158.4 3.187 -87.1 0.025 -120.5 0.783 138.0 2.7 0.225 -130.2 3.095 -124.9 0.029 -159.7 0.736 118.1 2.8 0.521 -129.2 2.670 -164.1 0.027 163.0 0.648 95.0 2.9 0.713 -143.9 2.123 159.6 0.023 131.1 0.568 66.3 3 0.811 -156.1 1.664 126.9 0.018 104.2 0.515 26.4
4 FLL21E180IU high voltage - high power gaas fet board layout < input side> < output side> e r =3.5 t=0.6mm m w w m m m w w
5 iu package outline metal-ceramic hermetic package pin assigment 1,2 : gate 3 : source 4.5 : drain 6 : source unit : mm FLL21E180IU high voltage - high power gaas fet
6 FLL21E180IU high voltage - high power gaas fet for further information please contact : eudyna devices usa inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. phone: (408) 232-9500 fax: (408) 428-9111 www.fcsi.fujitsu.com eudyna devices europe ltd . network house norreys drive maidenhead, berkshire sl6 4fj phone: +44 (0) 1628 504800 fax: +44 (0) 1628 504888 caution fujitsu compound semiconductor products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: ?e do not put these products into the mouth. ?e do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by- products are dangerous to the human body if inhaled, ingested, or swallowed. ?e observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. eudyna devices asia pte . ltd . hong kong branch rm .1101,ocean centre , 5 canton road, tsim sha tsui kowloon , hong kong tel: +852-2377-0227 fax: +852-2377-3921 eudyna devices inc. 1000 kamisukiahara , showa-cho , nakakomagun , yamanashi 409-3883, japan ( kokubo industrial park) tel +81-55-275-4411 fax +81-55-275-9461 sales division 1, kanai-cho , sakae-ku ,yokohama,244-0845,japan tel +81-45-853-8156 fax +81-45-853-8170
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